- Samsung’s HBM3E 12H achieves industry’s largest capacity HBM with groundbreaking 12-layer stack, raising both performance and capacity by more than 50%
- Advanced TC NCF technology enhances vertical density and thermal properties
- Samsung positioned to meet demand for high-performance and high-capacity solutions in the AI era.
Samsung Electronics Co., Ltd., a world leader in advanced memory technology, today announced that it has developed HBM3E 12H, the industry’s first 12-stack HBM3E DRAM and the highest-capacity HBM product to date.
Samsung’s HBM3E 12H provides an all-time high bandwidth of
up to 1,280 gigabytes per second (GB/s) and an industry-leading capacity of 36
gigabytes (GB). In comparison to the 8-stack HBM3 8H, both aspects have
improved by more than 50%.
“The industry’s AI service providers are increasingly
requiring HBM with higher capacity, and our new HBM3E 12H product has been
designed to answer that need,” said Yongcheol Bae, Executive Vice President of
Memory Product Planning at Samsung Electronics. “This new memory solution forms
part of our drive toward developing core technologies for high-stack HBM and
providing technological leadership for the high-capacity HBM market in the AI
era.”
The HBM3E 12H applies advanced thermal compression
non-conductive film (TC NCF), allowing the 12-layer products to have the same
height specification as 8-layer ones to meet current HBM package requirements.
The technology is anticipated to have added benefits especially with higher
stacks as the industry seeks to mitigate chip die warping that come with
thinner die. Samsung has continued to lower the thickness of its NCF material
and achieved the industry’s smallest gap between chips at seven micrometers (µm),
while also eliminating voids between layers. These efforts result in enhanced
vertical density by over 20% compared to its HBM3 8H product.
Samsung’s advanced TC NCF also improves thermal properties
of the HBM by enabling the use of bumps in various sizes between the chips.
During the chip bonding process, smaller bumps are used in areas for signaling
and larger ones are placed in spots that require heat dissipation. This method
also helps with higher product yield.
As AI applications grow exponentially, the HBM3E 12H is
expected to be an optimal solution for future systems that require more memory.
Its higher performance and capacity will especially allow customers to manage
their resources more flexibly and reduce total cost of ownership (TCO) for
datacenters. When used in AI applications, it is estimated that, in comparison
to adopting HBM3 8H, the average speed for AI training can be increased by 34%
while the number of simultaneous users of inference services can be expanded
more than 11.5 times.1
Samsung has begun sampling its HBM3E 12H to customers and
mass production is slated for the first half of this year.
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